November 29, 2017 Press Release
TOKYO - Toshiba Memory Corporation, the world leader in memory solutions, has today started sampling Universal Flash Storage (UFS) devices utilizing Toshiba Memory Corporation's cutting-edge 64-layer, BiCS FLASH™ 3D flash memory.  The new UFS devices meet performance demands for applications that require high-speed read/write performance and low power consumption, including mobile devices such as smartphones and tablets, and augmented and virtual reality systems.
The new line-up will be available in four capacities: 32GB, 64GB, 128GB and 256GB.  All of the devices integrate flash memory and a controller in a single, JEDEC-standard 11.5 x 13mm package. The controller performs error correction, wear leveling, logical-to-physical address translation and bad-block management, allowing users to simplify system development.
All four devices are compliant with JEDEC UFS Ver2.1, including HS-GEAR3, which has a theoretical interface speed of up to 5.8Gbps per lane (x2 lanes = 11.6Gbps) while also suppressing any increase in power consumption. Sequential read and write performance of the 64GB device are 900MB/s and 180MB/s, while the random read and write performance are around 200% and 185% better, respectively, than those of previous generation devices. Due to its serial interface, UFS supports full duplexing, which enables both concurrent reading and writing between the host processor and UFS device.
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Information in this document, including product prices and specifications, content of services and contact information, is correct on the date of the announcement but is subject to change without prior notice.
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